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Low temperature epitaxial growth of GaN films on LiGaO2 substrates

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5 Author(s)
Sakurada, Kento ; Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan ; Kobayashi, Atsushi ; Kawaguchi, Yuji ; Ohta, Jitsuo
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GaN films have been grown on LiGaO2 {001} substrates at low substrate temperatures by pulsed laser deposition and their structural properties have been investigated. It is found that the metal-face LiGaO2 substrates are thermally more stable than O-face LiGaO2. It is also found that growth of GaN films proceeds epitaxially, even at room temperature (RT), on metal-face LiGaO2, but polycrystalline GaN films are formed on O-face LiGaO2 at RT. Reduction in growth temperature lessens the interface reactions that have previously been regarded as the most serious problem with this substrate have been revealed by x-ray reflectivity measurements.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 21 )