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Epitaxial growth of sol-gel derived BiScO3PbTiO3 thin film on Nb-doped SrTiO3 single crystal substrate

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5 Author(s)
Wen, Hai ; State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China ; Wang, Xiaohui ; Zhong, Caifu ; Shu, Like
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BiScO3PbTiO3 (BSPT) thin film was grown on electrical conductive Nb-doped SrTiO3 (100) (Nb-STO) single crystal substrate by a sol-gel method. The x-ray diffraction and high resolution transmission electron microscopy proved the epitaxial growth relation between the BSPT thin film and Nb-STO substrate. The [001]-epitaxial BSPT thin film exhibited considerable high remanent polarization of 74 μC/cm2 and effective piezoelectric coefficient d33* of 130 pm/V, which were much higher than those of the (100)-oriented BSPT thin film grown on traditional silicon substrate.

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Applied Physics Letters  (Volume:90 ,  Issue: 20 )