By Topic

Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Danno, Katsunori ; Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-Katsura, Nishikyo, Kyoto 615-8510, Japan ; Nakamura, Daisuke ; Kimoto, T.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Carrier lifetimes in 4H-SiC epilayers are investigated by differential microwave photoconductivity decay measurements. When the Z1/2 concentration is higher than 1013 cm-3, the Z1/2 center works as a recombination center. In this case, carrier lifetimes show positive dependence on the injection level (number of irradiated photons). On the other hand, other recombination processes such as surface recombination limit the lifetime when the Z1/2 concentration is lower than 1013 cm-3. In this case, carrier lifetimes have decreased by increasing the injection level. By controlling the Z1/2 concentration by low-energy electron irradiation, the lifetime control has been achieved.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 20 )