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The deposition of amorphous and epitaxial silicon thin films on H-terminated Si(100) has been studied in real time by the simultaneous application of spectroscopic ellipsometry, attenuated total reflection infrared spectroscopy, and optical second-harmonic generation. The morphology development of the films could be monitored nonintrusively in terms of critical point resonances and H bonding resolving the abruptness of the film-substrate interface and providing a clear distinction between direct heterointerface formation, nanometer-level epitaxial growth, and epitaxial breakdown.
Published in:
Applied Physics Letters
(Volume:90
,
Issue:
20
)
Date of Publication: May 2007
- Page(s):
- 202108 - 202108-3
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.2740474
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- May 2007
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