By Topic

Strained Si n-channel metal-oxide-semiconductor field-effect transistors formed on very thin SiGe relaxed layer fabricated by ion implantation technique

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Sawano, K. ; Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082, Japan ; Fukumoto, A. ; Hoshi, Y. ; Shiraki, Y.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Strained Si n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated on the Si0.83Ge0.17 relaxed thin layer formed by ion implantation technique. Although the SiGe thickness was as small as 100 nm, the relaxation was highly enhanced thanks to the pre-ion-implantation into the Si substrate and the strained Si channel with very smooth surface was obtained. A nMOSFET was fabricated in this structure and 100% drive current improvement and 60% mobility enhancement over the control Si MOSFET were achieved. This indicates that the ion implantation technique is very promising for realization of relaxed-SiGe-based devices with very high performances.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 20 )