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Growth of very-high-mobility AlGaSb/InAs high-electron-mobility transistor structure on si substrate for high speed electronic applications

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7 Author(s)
Lin, Y.C. ; Department of Materials Science and Engineering, National Chiao Tung University, Taiwan 30050, Republic of China and NTT Basic Research Laboratories, Kanagawa 243-0198, Japan ; Yamaguchi, H. ; Chang, E.Y. ; Hsieh, Y.C.
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The growth of the AlGaSb/InAs high-electron-mobility transistor (HEMT) epitaxial structure on the Si substrate is investigated. Buffer layers consisted of UHV/chemical vapor deposited grown Ge/GeSi and molecular beam epitaxy-grown AlGaSb/AlSb/GaAs were used to accommodate the strain induced by the large lattice mismatch between the AlGaSb/InAs HEMT structure and the Si substrate. The crystalline quality of the structure grown was examined by x-ray diffraction, transmission electron microscopy, and atomic force microscopy. Finally, very high room-temperature electron mobility of 27 300 cm2/V s was achieved. It is demonstrated that a very-high-mobility AlGaSb/InAs HEMT structure on the Si substrate can be achieved with the properly designed buffer layers.

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Applied Physics Letters  (Volume:90 ,  Issue: 2 )