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Strains in BaTiO3 thin film deposited onto Pt-coated Si substrate

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3 Author(s)
Dkhil, Brahim ; Laboratoire Structures, Propriétés et Modélisation des Solides (SPMS), Ecole Centrale Paris, UMR-CNRS 8580, F-92290 Châtenay-Malabry, France ; Defay, Emmanuel ; Guillan, J.

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The ferroelectric-paraelectric phase transition was investigated in BaTiO3 100 nm thick film deposited on platinized Si substrate by measuring the lattice parameters as a function of temperature and the hysteresis loop at room temperature. The transition from paraelectric to ferroelectric phase takes place at ∼420 K (instead of 400 K for unconstrained single crystals), whereas the film is under high tensile elastic in-plane strain (0.34%) and high inhomogeneous strain (0.69%) along the growth direction. Comparison of the experimental results with recent theoretical calculations suggests a monoclinic ferroelectric phase at room temperature, where interface “dead layer” plays a key role.

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Applied Physics Letters  (Volume:90 ,  Issue: 2 )