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Giant and zero electron g factors of dilute nitride semiconductor nanowires

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4 Author(s)
Zhang, X.W. ; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore and Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China ; Fan, W.J. ; Li, S.S. ; Xia, J.B.

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The electronic structures and electron g factors of InSb1-sNs and GaAs1-sNs nanowires and bulk material under the magnetic and electric fields are investigated by using the ten-band k∙p model. The nitrogen doping has direct and indirect effects on the g factors. A giant g factor with absolute value larger than 900 is found in InSb1-sNs bulk material. A transverse electric field can increase the g factors, which has obviously asymmetric effects on the g factors in different directions. An electric field tunable zero g factor is found in GaAs1-sNs nanowires.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 19 )