The stress-strain relationships under tensile and shear loads are calculated for hcp(β)-Si3N4 and fcc(NaCl)-SiN by means of ab initio density functional theory. The ideal shear strengths for fcc-SiN are much lower than those for hcp-Si3N4. This is in agreement with experiments which show that the interfacial fcc-SiN can strengthen the TiN/SiN heterostructures only when its thickness is about 1–2 ML. Based on the calculated electronic density of states, the physical origin of the mechanical strengths is addressed.
Published in:
Applied Physics Letters
(Volume:90
,
Issue:
19
)
Date of Publication:
May 2007
- Page(s):
-
191903
-
191903-3
- ISSN :
-
0003-6951
- Digital Object Identifier :
-
10.1063/1.2737376
- Product Type:
-
Journals & Magazines
- Date of Current Version :
-
18 June 2009
- Issue Date :
-
May 2007