By Topic

Two-photon absorption and Kerr coefficients of silicon for 850–2200 nm

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Bristow, A.D. ; Department of Physics and Institute for Optical Sciences, University of Toronto, Toronto M5S-1A7, Canada ; Rotenberg, N. ; van Driel, H.M.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2737359 

The degenerate two-photon absorption coefficient β and Kerr nonlinearity n2 are measured for bulk Si at 300 K using 200 fs pulses with carrier wavelength of 850≪λ≪2200 nm for which indirect gap transitions occur. With a broad peak near the indirect gap and maximum value of 2±0.5 cm/GW, the dispersion of β compares favorably with theoretical calculations of Garcia and Kalyanaraman [J. Phys. B 39, 2737 (2006)]. Within our wavelength range, n2 varies by a factor of 4 with a peak value of 1.2×10-13 cm2/W at λ=1800 nm.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 19 )