By Topic

High electron doping to a wide band gap semiconductor 12CaO∙7Al2O3 thin film

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
4 Author(s)
Miyakawa, Masashi ; Frontier Collaborative Research Center, Tokyo Institute of Technology, Mail Box S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan ; Hirano, Masahiro ; Kamiya, Toshio ; Hosono, Hideo

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2735280 

High-density electrons (∼1.9×1021 cm-3) were doped into a polycrystalline film of a wide band gap (∼7 eV) semiconductor 12CaO∙7Al2O3 (C12A7) by an in situ postdeposition reduction treatment using an oxygen-deficient C12A7 overlayer. The resultant film exhibits metallic conduction with a Hall mobility of ∼2.5 cm2 V-1 s-1 and a conductivity of ∼800 S cm-1. Optical analyses indicate that most of the doped electrons behave as free carriers with an effective mass of 0.82me and the estimated in-grain mobility is 5.2 cm2 V-1 s-1, which agrees reasonably with the value obtained for high-quality single crystals.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 18 )