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Photon number resolving detector based on a quantum dot field effect transistor

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6 Author(s)
KardynaƂ, B.E. ; Toshiba Research Europe Ltd., 260 Cambridge Science Park, Cambridge CB4 0WE, United Kingdom ; Hees, S.S. ; Shields, A.J. ; Nicoll, C.
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The authors show that the change in current flowing through the channel of a quantum dot field effect transistor is proportional to the number (N) of photons absorbed from an incident pulse. Distinct features due to photon number state up to N=3 are resolved. With improvement of external quantum efficiency the device may form a useful photon number resolving detector.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 18 )