Direct measurement of strain in an individual leading-edge p-channel field effect transistor embedded with SiGe was carried out using a synchrotron x-ray source. Diffraction space maps of these scans from two nonparallel reflecting planes, (004) and (115), detected the presence of strain in the channel. Detailed analysis showed that a maximum strain occurred at the top with gradual decay towards the substrate. Strain in the channel is relieved by formation of tilt boundary at the Si–SiGe interface. The lattice parameters in two directions are derived from measured data and the strain is calculated under the plane strain condition.