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Role of atomic nitrogen during GaN growth by plasma-assisted molecular beam epitaxy revealed by appearance mass spectrometry

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6 Author(s)
Osaka, J. ; Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan ; Senthil Kumar, M. ; Toyoda, H. ; Ishijima, T.
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To identify the species which contribute to GaN growth, the authors investigated the discharge parameter (0.3–4.8 SCCM (SCCM denotes cubic centimeter per minute at STP), 150–400 W) dependences of the atomic N flux by appearance mass spectrometry and of the incorporated nitrogen atoms into GaN layers grown by plasma-assisted molecular beam epitaxy (PAMBE) using the rf-plasma source. Ion fluxes were also evaluated by ion current measurements. A good correlation between the supplied atomic N flux and the incorporated nitrogen flux was obtained under a wide range of plasma conditions. It was clarified that the atomic N plays a dominant role in the growth of GaN by PAMBE.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 17 )

Date of Publication:

Apr 2007

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