By Topic

Changes in the electronic structures and optical band gap of Ge2Sb2Te5 and N-doped Ge2Sb2Te5 during phase transition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Kim, YoungKuk ; Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea ; Jeong, K. ; Cho, M.-H. ; Hwang, Uk
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2722203 

Changes in the electronic structures of Ge2Sb2Te5 (GST) and N-doped Ge2Sb2Te5 film during the phase transition from an amorphous to a crystalline phase were studied using synchrotron radiation high-resolution x-ray photoemission spectroscopy. The changes in tetrahedral and octahedral coordinated Ge 3d peaks are closely related to the changes in the chemical bonding state of GST films. The metallic Sb peak in the Sb 4d spectra of annealed GST films demonstrates that the metallic Sb atoms become segregated during thermal treatment resulting in phase separation. The incorporation of nitrogen into the GST film affects its structure and chemical bonding state, resulting in the suppression of crystallization. The incorporation of nitrogen also increases the optical band gap of the film due to the formation of a nitride.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 17 )