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Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors

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6 Author(s)
Kim, S.K. ; School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 ; Xuan, Y. ; Ye, P.D. ; Mohammadi, S.
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High performance single-walled carbon nanotube field effect transistors (SWCNT-FETs) fabricated with thin atomic layer deposited (ALD) Al2O3 as gate dielectrics and passivation layer are demonstrated. A 1.5 μm gate-length SWCNT-FETs with 15 nm thick Al2O3 insulator shows a gate leakage current below 10-11 A at -2.5 V≪Vg≪+7 V, a subthreshold swing of S∼105 mV/decade, and a maximum on current of -12 μA at a reverse gate bias of -1 V. Lack of hysteresis in IV characteristics and low low frequency noise indicate high quality oxide-nanotube interface achieved utilizing ALD Al2O3 as gate dielectrics and passivation layer.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 16 )