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Low-voltage operation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer capacitors and metal-ferroelectric- insulator-semiconductor diodes

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3 Author(s)
Fujisaki, S. ; Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan ; Ishiwara, Hiroshi ; Fujisaki, Yoshihisa

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2723678 

Exceptionally low-voltage operation of organic ferroelectric capacitors and diodes was demonstrated. Ferroelectric polyvinylidene fluoride-trifluoroethylene [P(VDF-TrFE)] thin films were prepared by the solvent-cast method. Metal-ferroelectric-metal capacitors with 60-nm-thick P(VDF-TrFE) films exhibited well-saturated hysteresis curves whose coercive voltage (Vc) and remanent polarization (Pr) were 2.0 V and 11.9 μC/cm2, respectively. The authors also fabricated metal-ferroelectric-insulator-semiconductor diodes with 100-nm-thick P(VDF-TrFE) films. Rectangular-shaped capacitance-voltage (C-V) hysteresis loops were obtained with a voltage sweep range narrower than 5 V. The maximum memory window of 4.7 V was achieved.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 16 )

Date of Publication:

Apr 2007

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