Ambipolar organic light emitting field effect transistors with modified asymmetric electrodes

The authors report on gate-controlled light emission from an organic field effect transistor composed of a vapor-deposited thin film of α,ω-bis(biphenyl-4-yl)-terthiophene (BP3T) with an electron injection layer of pentacene for the drain electrode. A n-triacontane thin film vapor deposited on a Si/SiO₂ wafer was used as a buffer layer for the gate dielectric. The location of emission zones within the channel where both injected carriers recombine was controlled by the gate voltage. The insertion of the pentacene and n-triacontane layers improved the threshold voltage and mobility for electrons, resulting in balanced ambipolar carrier injection and transport.