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Carrier dynamics with blue emission in asymmetrically coupled GaN/Al0.5Ga0.5N/GaN multiquantum wells

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3 Author(s)
Park, Young S ; Quantum Functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Korea ; Im, Hyunsik ; Kang, T.W.

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Coupled multiquantum well structures consisting of GaN(10 Å)/Al0.5Ga0.5N(22 Å)/GaN(20 Å) bounded by Al0.5Ga0.5N (100 Å) barriers were characterized by photoluminescence measurements. The recombination dynamics of carriers localized in asymmetric double quantum wells were studied by analyzing temperature-dependent and time-resolved photoluminescence spectra. The authors observed carrier transfer between weakly and strongly localized states which resulted in a stronger blue emission with increasing temperature, and they analyzed its effects on the spectra in terms of the quantum confined screening effect. Time-resolved measurements yielded lifetimes of various transitions which had different origins ranging between ∼120 and ∼1300 ns.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 16 )