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Epitaxial growth and formation of interfacial misfit array for tensile GaAs on GaSb

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7 Author(s)
Huang, S.H. ; Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 ; Balakrishnan, G. ; Mehta, M. ; Khoshakhlagh, A.
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The authors report the formation of an interfacial misfit (IMF) array in the growth of relaxed GaAs bulk layers on a (001) GaSb surface. Under specific conditions, the high quality IMF array has a period of 5.6 nm and can accommodate the 7.78% tensile GaAs/GaSb lattice mismatch. The misfit site is identified as a 90° edge dislocation using Burger’s circuit theory and confirmed by high-resolution cross-section transmission electron microscopy (TEM) images. The resulting GaAs bulk material is both strain-free and highly crystalline. Plan-view TEM images show threading dislocation density of ∼3×106/cm2. This material demonstration will enable novel device structures including an embedded GaSb active region in GaAs device matrix.

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Applied Physics Letters  (Volume:90 ,  Issue: 16 )