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Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes

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5 Author(s)
Lee, Y.J. ; Department of Photonics, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan ; Lin, P.C. ; Lu, T.C. ; Kuo, H.C.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2722672 

An InGaN-based dual-wavelength blue/green (470 nm/550 nm) light emitting diode (LED) with three terminal operations has been designed and fabricated by using sapphire laser lift-off and wafer-bonding schemes. The device is equivalent to a parallel connection of blue and green LEDs; thus the effective electrical resistance of the device could be reduced. The luminous efficiency is 40 lm/W at 20 mA, accompanied by a broad electroluminescence emission with a combination of blue and green colors. This monolithically integrated dichromatic lighting structure has great potential in the application of the solid-state lighting.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 16 )

Date of Publication:

Apr 2007

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