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Experimental determination of the band gap dependence of Auger recombination in InGaAs/InP multiple quantum well lasers at room temperature

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3 Author(s)
Masse, N.F. ; Advanced Technology Institute, University of Surrey, Guildford, Surrey GU2 7XH, United Kingdom ; Adams, A.R. ; Sweeney, S.J.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2722041 

The band gap dependencies of the threshold current and its radiative component are measured using high pressure techniques. Detailed theoretical calculations show that the band gap dependence of the internal losses plays a significant role in the band gap dependence of the radiative current. Temperature dependence measurements show that the radiative current accounts for 20% of the total threshold current at room temperature. This allows us to determine the pressure dependence of the non-radiative Auger recombination current, and hence to experimentally obtain the variation of the Auger coefficient C with band gap.

Published in:
Applied Physics Letters  (Volume:90 ,  Issue: 16 )

Date of Publication: Apr 2007

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