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Phosphorus doping and hydrogen passivation of donors and defects in silicon nanowires synthesized by laser ablation

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9 Author(s)
Fukata, N. ; Advanced Electronic Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan ; Chen, J. ; Sekiguchi, T. ; Matsushita, S.
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Phosphorus (P) doping was performed during the synthesis of silicon nanowires (SiNWs) by laser ablation. At least three types of signals were observed by electron spin resonance (ESR) at 4.2 K. Phosphorus doping into substitutional sites of crystalline Si in SiNWs was demonstrated by the detection of an ESR signal with a g value of 1.998, which corresponds to conduction electrons in crystalline Si, and by an energy-dispersive x-ray spectroscopy spectrum of the P  line. The ESR results also revealed the presence of defects. These defects were partially passivated by hydrogen and oxygen atoms.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 15 )

Date of Publication:

Apr 2007

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