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Influence of silicon doping on vacancies and optical properties of AlxGa1-xN thin films

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6 Author(s)
Slotte, J. ; Laboratory of Physics, Helsinki University of Technology, P.O. Box 1100, FIN-02015 HUT, Finland ; Tuomisto, F. ; Saarinen, K. ; Moe, C.G.
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The authors have used positron annihilation spectroscopy and photoluminescence measurements to study the influence of silicon doping on vacancy formation in AlGaN:Si structures. The results show a correlation between the Doppler broadening measurements and the intensity from 510 nm photoluminescence transition. The reduction in the W parameter when the [Si]/[Al+Ga] fraction in the gas phase is above 3×10-4 indicates that the positrons annihilate in an environment where less Ga 3d electrons are present, i.e., they are trapped in group-III vacancies. The observation of vacancies at these silicon concentrations coincides with the onset of the photoluminescence transition at 510 nm.

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Applied Physics Letters  (Volume:90 ,  Issue: 15 )