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Top-emitting 230 dots/in. active-matrix polymer light-emitting diode displays on flexible metal foil substrates

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7 Author(s)
Chuang, Ta-Ko ; Display Research Laboratory, Department of Electrical and Computer Engineering, Lehigh University, 16A Memorial Drive East, Bethlehem, Pennsylvania 18015 ; Troccoli, Matias ; Po-Chin Kuo ; Jamshidi-Roudbari, Abbas
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A top-emitting 230 dots/in. monochrome active-matrix polymer light-emitting diode (PLED) display having the VGA format and fabricated on a flexible steel foil utilizing the polycrystalline silicon thin-film transistor (TFT) technology is reported. The pixel circuitry architecture consists of the conventional two TFT circuitries made of two p-channel metal-oxide-semiconductor (PMOS) transistors and one storage capacitor. The average field-effect hole mobility and threshold voltage of the PMOS polysilicon TFTs fabricated on the metal foil are 37(±4) cm2/V s and -1.9(±0.6) V, respectively. The light turn-on voltage of the PLED is 4.0 V.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 15 )