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Valence band tunneling model for charge transfer of redox-active molecules attached to n- and p-silicon substrates

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3 Author(s)
Gowda, Srivardhan ; Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 ; Mathur, Guru ; Misra, V.

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In this work, monolayers of the redox-active molecules, with cationic- accessible states, were incorporated on p- and n-type silicons of varying doping concentrations. The redox voltages and kinetics were found to be strongly dependent on the silicon doping concentrations, and ambient light in case of n-Si substrate, while there was no significant impact of substrate doping concentration or ambient light in case of p-Si substrate. These results suggest the redox energy states in the molecule align within the valence band of the silicon substrate. Based on this, a model for electronic coupling and charge transfer at the molecule-semiconductor interfaces is proposed.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 14 )

Date of Publication:

Apr 2007

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