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Browse Journals & Magazines > Applied Physics Letters ...> Volume:90 Issue:13 Help

Structural and magnetic properties of epitaxially grown Ge1-xFex thin films: Fe concentration dependence

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3 Author(s)
Shuto, Y. ; Department of Electronic Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan ; Tanaka, Masaaki ; Sugahara, S.

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Ge1-xFex films (x=2.0%–24.0%) grown by low-temperature molecular beam epitaxy were shown to have a diamond-type crystal structure without any other crystallographic phase of precipitates, although they contain slightly nonuniform Fe distribution and tiny stacking fault defects. The lattice constant decreases linearly with increasing the Fe content x from 0% to 13.0%, and is saturated for x≫13.0%. The Curie temperature (TC) increases in proportion to x (≤13.0%) and is saturated for x≫13.0%. The maximum TC value was ∼170 K at x≫13.0%. The structural and magnetic properties indicate that Ge1-xFex is an “intrinsic” ferromagnetic semiconductor.

Published in:
Applied Physics Letters  (Volume:90 ,  Issue: 13 )

Date of Publication: Mar 2007

Page(s):
132512 - 132512-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2718270
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Mar 2007

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