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Band diagrams of spin tunneling junctions La0.6Sr0.4MnO3/Nb:SrTiO3 and SrRuO3/Nb:SrTiO3 determined by in situ photoemission spectroscopy

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4 Author(s)
Minohara, M. ; Graduate School of Arts and Sciences, The University of Tokyo, Tokyo 153-8902, Japan ; Ohkubo, I. ; Kumigashira, H. ; Oshima, M.

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The authors report on the band diagram for epitaxial Schottky junctions of ferromagnetic metallic oxides [half-metallic ferromagnet La0.6Sr0.4MnO3 (LSMO) and itinerant ferromagnet SrRuO3 (SRO)] on Nb-doped SrTiO3 (Nb:STO) semiconductor substrates using in situ photoemission spectroscopy. The ideal Schottky barrier is formed in SRO/Nb:STO junctions with Schottky barrier height (SBH) of 1.2±0.1 eV, while the measured SBH of LSMO/Nb:STO (1.2±0.1 eV) is much larger than the prediction from the Schottky-Mott rule (0.7±0.1 eV). These results suggest that a certain interface dipole is formed at the LSMO/Nb:STO interface.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 13 )

Date of Publication:

Mar 2007

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