IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | 

Close category search window
Author Searchbeta |  Advanced Search  |  Preferences |  Search Tips  |  More Search Options  
 
Browse Journals & Magazines > Applied Physics Letters ...> Volume:90 Issue:13 Help

Deposition of In2S3 on Cu(In,Ga)(S,Se)2 thin film solar cell absorbers by spray ion layer gas reaction: Evidence of strong interfacial diffusion

Full Text Sign-In or Purchase

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing! close button
puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Bar, M. ; Department of Chemistry, University of Nevada, Las Vegas, 4505 Maryland Parkway, Las Vegas, Nevada 89154 and Solarenergieforschung (SE2), Hahn-Meitner-Institut Berlin, Glienicker Strasse 100, D-14109 Berlin, Germany ; Allsop, N. ; Lauermann, I. ; Fischer, Ch.-H.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2717534 

Recently, Cd-free Cu(In,Ga)(S,Se)2-based “CIGSSe” thin film solar cells with a nominal In2S3 buffer layer deposited by the spray ion layer gas reaction technique resulted in photovoltaic performances comparable to that of CdS buffered references. In the past it was argued that diffusion processes across the In2S3/CIGSSe interface play a significant role for the device quality. Investigating the interface formation by using x-ray photoelectron spectroscopy, the authors were able to confirm a strong interfacial diffusion involving Cu and Na from the CIGSSe.

Published in:
Applied Physics Letters  (Volume:90 ,  Issue: 13 )

Date of Publication: Mar 2007

Page(s):
132118 - 132118-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2717534
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Mar 2007

IEEE Account

Purchase Details

Profile Information

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.