By Topic

Measurement of carrier concentration captured by InAs/GaAs quantum dots using terahertz time-domain spectroscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Seung Jae Oh ; Department of Physics, University of Seoul, Seoul 130-743, Korea ; Chul Kang ; Inhee Maeng ; Joo-Hiuk Son
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The authors investigated the carrier dynamics of n-type modulation-doped InAs/GaAs quantum dots (QDs) using terahertz time-domain spectroscopy to estimate the total number of electrons captured by the QDs. The terahertz power absorption of the sample with QDs was less than that of the sample without QDs. This is attributed to the fact that the carriers are confined in the QDs. The experiment results were fitted into the Drude model and the number of electrons captured by QDs was determined through the difference in the numbers of free electrons of the samples with and without QDs.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 13 )