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High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature

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4 Author(s)
Lim, H. ; Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208 ; Tsao, S. ; Zhang, W. ; Razeghi, M.

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The authors report a room temperature operating InAs quantum-dot infrared photodetector grown on InP substrate. The self-assembled InAs quantum dots and the device structure were grown by low-pressure metal-organic chemical vapor deposition. The detectivity was 2.8×1011 cm Hz1/2/W at 120 K and a bias of -5 V with a peak detection wavelength around 4.1 μm and a quantum efficiency of 35%. Due to the low dark current and high responsivity, a clear photoresponse has been observed at room temperature, which gives a detectivity of 6.7×107 cm Hz1/2/W.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 13 )