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Improved surface and structural properties of InAs/GaSb superlattices on (001) GaSb substrate by introducing an InAsSb layer at interfaces

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8 Author(s)
Zhang, X.B. ; Center for Compound Semiconductors, School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Drive NW, Atlanta, Georgia 30332-0250 ; Ryou, J.-H. ; Dupuis, R.D. ; Xu, C.
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InAs/GaSb type-II superlattices (SLs) were grown on (001) GaSb substrates by metal organic chemical vapor deposition. Besides the expected tensile stress introduced by the InAs layers in the SLs, additional tensile stress is found in the InAs/GaSb SLs from the simulation of x-ray diffraction (XRD) curves of the SLs. High-resolution transmission electron microscopy and XRD of the SLs grown with different interface gas switching procedures suggest that the additional tensile stress is mainly located at the GaSbInAs interface. To compensate for the tensile stress in the SL structures, we show that introducing ∼2-ML-thick InAs0.8Sb0.2 layer at the interfaces of the SL improves the morphology and the structural properties of the SLs significantly.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 13 )

Date of Publication:

Mar 2007

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