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Three-dimensional nanoscale subsurface optical imaging of silicon circuits

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7 Author(s)
Ramsay, E. ; School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom ; Serrels, K.A. ; Thomson, M.J. ; Waddie, A.J.
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Three-dimensional subsurface imaging through the back side of a silicon flip chip is reported with a diffraction-limited lateral resolution of 166 nm and an axial performance capable of resolving features only 100 nm deep. This performance was achieved by implementing sample-scanned two-photon optical beam induced current microscopy using a silicon solid immersion lens and a peak detection algorithm. The excitation source was a 1530 nm erbium:fiber laser, and the lateral optical resolution obtained corresponds to 11% of the free-space wavelength.

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Applied Physics Letters  (Volume:90 ,  Issue: 13 )