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Deep level defects which limit current gain in 4H SiC bipolar junction transistors

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3 Author(s)
Cochrane, C.J. ; The Pennsylvania State University, University Park, Pennsylvania 16802 ; Lenahan, P.M. ; Lelis, A.J.

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The authors employ a very sensitive electrically detected electron spin resonance technique called spin dependent recombination to observe recombination centers in fully processed 4H SiC n-p-n bipolar junction transistors. Their measurements indicate that the observed dominating recombination defect in these transistors is an intrinsic center of high symmetry, most likely a vacancy. This defect likely plays a dominating role in limiting the current gain in these 4H SiC devices.

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Applied Physics Letters  (Volume:90 ,  Issue: 12 )