By Topic

Deep level defects which limit current gain in 4H SiC bipolar junction transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)
Cochrane, C.J. ; The Pennsylvania State University, University Park, Pennsylvania 16802 ; Lenahan, P.M. ; Lelis, A.J.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2714285 

The authors employ a very sensitive electrically detected electron spin resonance technique called spin dependent recombination to observe recombination centers in fully processed 4H SiC n-p-n bipolar junction transistors. Their measurements indicate that the observed dominating recombination defect in these transistors is an intrinsic center of high symmetry, most likely a vacancy. This defect likely plays a dominating role in limiting the current gain in these 4H SiC devices.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 12 )