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Thermal instability and the growth of the InGaAs/AlGaAs pseudomorphic high electron mobility transistor system

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8 Author(s)
Pellegrino, Joseph G. ; U. S. Army Night Vision Laboratory, Fort Belvoir, Virginia 22060 ; Qadri, Syed B. ; Mahadik, Nadeemullah A. ; Rao, Mulpuri V.
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The effects of temperature overshoot during molecular beam epitaxy growth on the transport properties of conventionally and delta-doped pseudomorphic high electron mobility transistor (pHEMT) structures have been examined. A diffuse reflectance spectroscopy (DRS)-controlled versus a thermocouple (TC)-controlled, growth scheme is compared. Several advantages of the DRS-grown pHEMTs over the TC-controlled version were observed. Modest improvements in mobility, on the order of 2%–3%, were observed in addition to a 20% reduction in carrier freeze-out for the DRS-grown pHEMTs at 77 K.

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Applied Physics Letters  (Volume:90 ,  Issue: 11 )