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Fluorine incorporation at HfO2/SiO2 interfaces in high-k metal-oxide-semiconductor gate stacks: Local electronic structure

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5 Author(s)
Ha, Jeong-Hee ; Geballe Laboratory for Advanced Materials, Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 ; Seo, Kang-ill ; McIntyre, Paul C. ; Sarawat, Krishna C.
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Effects of fluorine incorporation on the electrical properties of HfO2/SiO2 dielectric stacks are investigated through both ab initio simulations and electrical measurements. The results show that F ions are able to remove midgap states resulting from undercoordinated Hf ions at the HfO2/SiO2 interface. They also indicate that F incorporation increases the leakage current if an excessive amount of F ions are present in the dielectric, beyond that required to passivate the undercoordinated interfacial Hf ions. A possible way to maximize the benefits of F incorporation for high-k gate stack electrical characteristics is discussed.

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Applied Physics Letters  (Volume:90 ,  Issue: 11 )