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Photoluminescence from low temperature grown InAs/GaAs quantum dots

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4 Author(s)
Sreenivasan, D. ; Department of Applied Physics, Eindhoven University of Technology, 5600MB Eindhoven, The Netherlands ; Haverkort, J.E.M. ; Eijkemans, T.J. ; Notzel, R.

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The authors investigated a set of self-assembled InAs/GaAs quantum dots (QDs) formed by molecular beam epitaxy at low temperature (LT, 250 °C) and postgrowth annealing. A QD photoluminescence (PL) peak around 1.01 eV was observed. The PL efficiency quickly quenches between 6 and 40 K due to the tunneling out of the QD into traps within the GaAs barrier. The PL efficiency increases by a factor of 45–280 when exciting below the GaAs band gap, directly into the InAs QD layer. This points towards good optical quality QDs, which are embedded in a LT-GaAs barrier with a high trapping efficiency.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 11 )