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Fabrication and characterization of a GaAs-based three-terminal nanowire junction device controlled by double Schottky wrap gates

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4 Author(s)
Nakamura, Tatsuya ; Research Center for Integrated Quantum Electronics, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan and Graduate School of Information Science and Technology, Hokkaido University, North 14, West 9, Kita-ku, Sapporo 060-0814, Japan ; Kasai, Seiya ; Shiratori, Yuta ; Hashizume, Tamotsu

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A three-terminal nanowire junction device controlled by double nanometer-sized Schottky wrap gates (WPGs), which control left and right branches independently, are fabricated utilizing AlGaAs/GaAs etched nanowires and characterized experimentally. Fabricated device exhibits clear nonlinear characteristics of output voltage at the center terminal by applying voltages to left and right terminals in push-pull fashion. Applying asymmetric gate voltages to left and right WPGs provides clear asymmetry in the output voltage. The nonlinearity in the low voltage regions is greatly enhanced by squeezing both left and right branches using WPGs.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 10 )

Date of Publication:

Mar 2007

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