By Topic

Atomistic treatment of interface roughness in Si nanowire transistors with different channel orientations

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Luisier, M. ; Integrated Systems Laboratory, Gloriastrasse 35, ETH Zurich, 8092 Zurich, Switzerland ; Schenk, A. ; Fichtner, Wolfgang

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2711275 

Nanowire transistors with a perfect crystal structure and a well-defined SiSiO2 interface cannot be grown with the actual technology. The shape of the semiconducting channel varies from source to drain. By self-consistently coupling the three-dimensional Schrödinger and Poisson equations, interface roughness (IR) effects are studied in Si triple-gate nanowire transistors with [100], [110], [111], and [112] oriented channels. The full-band electronic transport is computed in the nearest-neighbor sp3d5s* tight-binding model. IR is included by adding or removing atoms at the Si surface. A comparison of the different channel orientations is achieved by calculating the variations of the transistor threshold voltage.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 10 )