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Atomistic treatment of interface roughness in Si nanowire transistors with different channel orientations

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3 Author(s)
Luisier, M. ; Integrated Systems Laboratory, Gloriastrasse 35, ETH Zurich, 8092 Zurich, Switzerland ; Schenk, A. ; Fichtner, Wolfgang

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Nanowire transistors with a perfect crystal structure and a well-defined SiSiO2 interface cannot be grown with the actual technology. The shape of the semiconducting channel varies from source to drain. By self-consistently coupling the three-dimensional Schrödinger and Poisson equations, interface roughness (IR) effects are studied in Si triple-gate nanowire transistors with [100], [110], [111], and [112] oriented channels. The full-band electronic transport is computed in the nearest-neighbor sp3d5s* tight-binding model. IR is included by adding or removing atoms at the Si surface. A comparison of the different channel orientations is achieved by calculating the variations of the transistor threshold voltage.

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Applied Physics Letters  (Volume:90 ,  Issue: 10 )