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InGaN/GaN nanostripe grown on pattern sapphire by metal organic chemical vapor deposition

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8 Author(s)
Ko, T.S. ; Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 30050, Taiwan, Republic of China ; Wang, T.C. ; Gao, R.C. ; Lee, Y.J.
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The authors have used metal organic chemical vapor deposition to grow InGaN/GaN multiple quantum well (MQW) nanostripes on trapezoidally patterned c-plane sapphire substrates. Transmission electron microscopy (TEM) images clearly revealed that the MQWs grew not only on the top faces of the trapezoids but also on both lateral side facets along the [0001] direction defined by the selected area electron diffraction pattern. Meanwhile, dislocations that stretched from the interfaces between the GaN and the substrates did not pass through the MQWs in the TEM observation. Microphotoluminescence measurements verified that the luminescence efficiency from a single nanostripe was enhanced by up to fivefold relative to those of regular thin film MQW structures. Observation of the cathodoluminescence identified the areas of light emission and confirmed that enhanced emission occurred from the nanostripes.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 1 )

Date of Publication:

Jan 2007

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