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Highly spin-polarized tunneling in fully epitaxial Co2Cr0.6Fe0.4Al/MgO/Co50Fe50 magnetic tunnel junctions with exchange biasing

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6 Author(s)
Marukame, Takao ; Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, N14, W9, Kita-ku, Sapporo 060-0814, Japan ; Ishikawa, Takayuki ; Hakamata, Shinya ; Matsuda, Ken-ichi
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Fully epitaxial magnetic tunnel junctions (MTJs) with exchange biasing were fabricated with a full-Heusler alloy Co2Cr0.6Fe0.4Al (CCFA) thin film and a MgO tunnel barrier, where a Co50Fe50 upper electrode was used in a synthetic ferrimagnetic Co50Fe50/Ru/Co90Fe10 trilayer exchange-biased with an IrMn layer through the Co90Fe10/IrMn interface. The fabricated MTJs exhibited clear exchange-biased tunnel magnetoresistance (TMR) characteristics with high TMR ratios of 109% at room temperature and 317% at 4.2 K. A high tunneling spin polarization of 0.88 at 4.2 K was estimated for epitaxial CCFA films with the B2 structure.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 1 )

Date of Publication:

Jan 2007

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