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Electrical field control magnetic phase transition in nanostructured MnxGe1-x

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3 Author(s)
Chen, Jingjing ; Electrical Engineering Department, University of California, Los Angeles, California, 90095 ; Wang, Kang L. ; Galatsis, K.

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The authors have investigated the magnetic, electrical, and structural properties of MnxGe1-x (on Ge substrate) nanostructured films produced by a nanopattern assisted Mn implantation followed by annealing. The semiconducting property and hole-mediated ferromagnetism mechanism enabled them to control the magnetic phase transition in the diluted magnetic semiconductor channel by a gate bias.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 1 )