By Topic

High-mobility two-dimensional electron gas in InAlAs/InAs heterostructures grown on virtual InAs substrates by molecular-beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
5 Author(s)
Lin, Y. ; Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 ; Carlin, J.A. ; Arehart, A.R. ; Carlin, A.M.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

In0.8Al0.2As/InAs heterostructures were grown on virtual InAs substrates consisting of a relaxed InAsyP1-y step-graded buffer grown on InP by molecular-beam epitaxy. Hall measurements revealed the presence of a high-mobility two-dimensional electron gas within the relaxed InAs layer, with a peak electron mobility of 133 000 cm2/V s at 25 K. In contrast, identical InAlAs/InAs heterostructures grown directly on InAs buffers on InP showed only bulk transport characteristics. A combination of transport modeling and electron microscopy demonstrates that reduced dislocation scattering in the channel region is responsible for observing the two-dimensional transport within the relaxed InAs on graded InAsP. These results demonstrate the potential of achieving ultrahigh-speed InAs based high electron mobility transistors using relaxed, virtual InAs substrates on InP.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 1 )