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Local electronic and optical behaviors of a-plane GaN grown via epitaxial lateral overgrowth

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6 Author(s)
Moore, J.C. ; Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23284 ; Kasliwal, V. ; Baski, A.A. ; Ni, X.
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Conductive atomic force microscopy and near-field optical microscopy (NSOM) were used to study the morphology, conduction, and optical properties of a-plane GaN films grown via epitaxial lateral overgrowth (ELO) by metal organic chemical vapor deposition. The AFM images for the coalesced ELO films show undulations, where the window regions appear as depressions with a high density of surface pits. At reverse bias below 12 V, very low uniform conduction (2 pA) is seen in the window regions. Above 20 V, a lower-quality sample shows localized sites inside the window regions with significant leakage, indicating a correlation between the presence of surface pits and leakage sites. Room temperature NSOM studies explicitly showed enhanced optical quality in the wing regions of the overgrown GaN due to a reduced density of dislocations, with the wings and the windows clearly discernible from near-field photoluminescence mapping.

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Applied Physics Letters  (Volume:90 ,  Issue: 1 )