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Near-infrared camera in polycrystalline germanium integrated on complementary-metal-oxide semiconductor electronics

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6 Author(s)
Colace, L. ; Nonlinear Optics and OptoElectronics Laboratory (NooEL),University "Roma Tre", Via della Vasca Navale, 84-00146 Rome, Italy; INFN, University “Roma Tre”, Via della Vasca Navale, 84-00146 Rome, Italy; and Department of Electronic Engineering, University “Roma Tre”, Via della Vasca Navale, 84-00146 Rome, Italy ; Masini, G. ; Cozza, Stefano ; Assanto, G.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2425018 

The authors demonstrate a two-dimensional array of Si-integrated photodetectors equipped with readout electronics and operating in the near infrared. The chip is realized in polycrystalline Ge on a silicon complementary metal oxide semiconductor circuitry and includes 512 pixels, 64 analog to digital converters, dark current cancellation, and test/calibration facilities. They describe its design, fabrication, characterization, and operation as a near-infrared image sensor.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 1 )

Date of Publication:

Jan 2007

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