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Long wavelength VCSELs using AlAs/GaAs mirrors and strain-compensated quantum wells

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5 Author(s)
C. L. Chua ; Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA ; Z. H. Zhu ; Y. H. Lo ; M. Hong
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We present a 1.53 μm strain-compensated MQW VCSEL using wafer-fused AlAs/GaAs DBR mirrors. Under room temperature pulsed pumping, we measured excellent dynamic single mode characteristics, a low threshold current of 10 mA, and a linewidth of less than 0.1 nm

Published in:

High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Date of Conference:

7-9 Aug 1995