Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2337108
Self-heating effects are investigated in polycrystalline silicon thin film transistors by combining experimental measurements and two-dimensional numerical simulations. From the thermodynamic model the temperature distribution was extracted and found rather uniform along the channel. This allowed the authors to introduce a simplified method to determine the channel temperature when the device is affected by self-heating effects.