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Self-heating effects in polycrystalline silicon thin film transistors

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5 Author(s)
Valletta, A. ; IFN-CNR, Via Cineto Romano 42, 00156 Rome, Italy ; Moroni, Alessandro ; Mariucci, L. ; Bonfiglietti, Alessandra
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Self-heating effects are investigated in polycrystalline silicon thin film transistors by combining experimental measurements and two-dimensional numerical simulations. From the thermodynamic model the temperature distribution was extracted and found rather uniform along the channel. This allowed the authors to introduce a simplified method to determine the channel temperature when the device is affected by self-heating effects.

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Applied Physics Letters  (Volume:89 ,  Issue: 9 )