Cart (Loading....) | Create Account
Close category search window

Misfit strain relaxation in strained-Si layers on silicon-germanium-on-insulator substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Hirashita, N. ; MIRAI-Association of Super-Advanced Electronics Technology (ASET), 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan ; Moriyama, Y. ; Sugiyama, N. ; Toyoda, E.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The critical thickness of tensile-strained-Si layers grown at 600 °C on (001) surfaces of silicon-germanium-on-insulator substrates is experimentally studied for a tensile strain range between 0.4% and 1.2% and is found to be rather thinner than Houghton’s critical thickness [J. Appl. Phys. 70, 2136 (1991)] for compressively mismatched SiGe/Si (001) system. The thinner critical thickness in tensile-strained Si is attributed to the fact that the stress-relieving misfit dislocations are 90° partial dislocations, instead of 60° misfit dislocations for compressive SiGe layers on Si (001) substrates. Although 60° misfit dislocation is found to be increasingly formed with increasing strained-Si layer thickness, the strain relaxation is sluggish and the tensile strain mostly remains for supercritical thickness ten times thicker than the critical thickness.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 9 )

Date of Publication:

Aug 2006

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.