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Misfit strain relaxation in strained-Si layers on silicon-germanium-on-insulator substrates

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5 Author(s)
Hirashita, N. ; MIRAI-Association of Super-Advanced Electronics Technology (ASET), 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan ; Moriyama, Y. ; Sugiyama, N. ; Toyoda, E.
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The critical thickness of tensile-strained-Si layers grown at 600 °C on (001) surfaces of silicon-germanium-on-insulator substrates is experimentally studied for a tensile strain range between 0.4% and 1.2% and is found to be rather thinner than Houghton’s critical thickness [J. Appl. Phys. 70, 2136 (1991)] for compressively mismatched SiGe/Si (001) system. The thinner critical thickness in tensile-strained Si is attributed to the fact that the stress-relieving misfit dislocations are 90° partial dislocations, instead of 60° misfit dislocations for compressive SiGe layers on Si (001) substrates. Although 60° misfit dislocation is found to be increasingly formed with increasing strained-Si layer thickness, the strain relaxation is sluggish and the tensile strain mostly remains for supercritical thickness ten times thicker than the critical thickness.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 9 )