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Browse Journals & Magazines > Applied Physics Letters ...> Volume:89 Issue:8 Help

Output properties of C60 field-effect transistor device with Eu source/drain electrodes

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8 Author(s)
Ochi, Kenji ; Department of Chemistry, Okayama University, Okayama 700-8530, Japan and CREST, Japan Science and Technology Agency, Kawaguchi 322-0012, Japan ; Nagano, Takayuki ; Ohta, Toshio ; Nouchi, Ryo
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2337990 

Field-effect transistor (FET) device with thin films of C60 has been fabricated with Eu electrodes exhibiting small work function. The C60 FET device shows n-channel FET properties with high field-effect mobility, 0.50 cm2 V-1 s-1. Furthermore, nonvanishing drain current, i.e., normally on, is observed in this FET device. This originates from small energy barrier for electron from Eu source electrode to lowest unoccupied molecular orbital of C60.

Published in:
Applied Physics Letters  (Volume:89 ,  Issue: 8 )

Date of Publication: Aug 2006

Page(s):
083511 - 083511-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2337990
Date of Current Version :
18 June 2009
Issue Date :
Aug 2006

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