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Three-terminal Ge dot/SiGe quantum-well photodetectors for near-infrared light detection

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4 Author(s)
Elfving, A. ; Department of Physics, Chemistry and Biology, Linköping University, 581 83 Linköping, Sweden ; Karim, A. ; Hansson, G.V. ; Ni, W.‐X.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2337867 

A three-terminal metal-oxide-semiconductor field-effect transistor type of photodetector has been fabricated with a multiple stack of Ge dot/SiGe quantum-well heterostructures as the active region for light detection at 1.3–1.55 μm. Gate-dependent edge incidence photoconductivity measurements at room temperature revealed a strong dependence of the photoresponse on the gate voltage. At positive gate bias, the hole transport from the dots into the wells was improved, resulting in a faster response. The high photoresponsivity at negative VG, measured to be 350 mA W-1 at 1.31 μm and 30 mA W-1 at 1.55 μm, was ascribed to the photoconductive gain.

Published in:

Applied Physics Letters  (Volume:89 ,  Issue: 8 )

Date of Publication:

Aug 2006

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